饱和电流
光伏系统
等效串联电阻
电致发光
材料科学
太阳能电池
光电子学
二极管
硅
电压
电流密度
饱和(图论)
电气工程
纳米技术
工程类
物理
量子力学
组合数学
数学
图层(电子)
作者
Amit Singh Rajput,Jian Wei Ho,Yin Zhang,Srinath Nalluri,Armin G. Aberle
出处
期刊:Solar Energy
[Elsevier]
日期:2018-07-30
卷期号:173: 201-208
被引量:28
标识
DOI:10.1016/j.solener.2018.07.046
摘要
An analysis routine, based on electroluminescence (EL) imaging is presented for the quantitative determination of electrical performance parameters of individual crystalline silicon solar cells within a photovoltaic (PV) module. Specifically, the series resistance and dark saturation current density of individual solar cells are extracted, providing an in-depth diagnosis of PV module performance. The current-voltage (I-V) characteristics of the PV module can then be computed through solar cell one-diode modelling. By comparing the performance of the original module with that of a simulated module, where the solar cells with poor series resistance and dark saturation current density, are replaced by better cells, the potential performance improvement can be predicted. The technique is simple and enables a fast analysis.
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