神经形态工程学
记忆电阻器
横杆开关
计算机科学
计算机体系结构
电阻随机存取存储器
人工神经网络
理想(伦理)
记忆晶体管
电子工程
人工智能
电气工程
工程类
电压
电信
哲学
认识论
作者
Saswat Panda,Chandra Sekhar Dash,Chinmayee Dora
出处
期刊:Current Nanoscience
[Bentham Science]
日期:2024-07-01
卷期号:20 (4): 495-509
标识
DOI:10.2174/1573413719666230516151142
摘要
Abstract: Recently memristors have emerged as a form of nonvolatile memory that is based on the principle of ion transport in solid electrolytes under the impact of an external electric field. It is perceived as one of the key elements to building next-generation computing systems owing to its peculiar resistive switching characteristics. The switching mechanism in a memristor is mainly governed by filamentary conduction. Further, it can be employed as a memory as well as a logic element, which makes it an ideal candidate for building innovative computer architecture. Moreover, it is capable of mimicking the characteristics of biological synapses, which makes it an ideal candidate for developing a Neuromorphic system. In this review to begin with the switching mechanism of the memristor, primarily focusing on filamentary conduction, is discussed. Few SPICE models of memristor are reviewed, and their critical comparison is performed, which are widely used to build computing systems. An in-depth study on the various crossbar memory architecture augmented with memristors is reviewed. Finally, the application of memristors in neuromorphic computing and hardware implementation of Artificial Neural Networks (ANN) employing memristors is discussed.
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