硅
非晶硅
晶体硅
无定形固体
纳米晶硅
材料科学
串联
堆栈(抽象数据类型)
光电子学
光伏系统
降级(电信)
电子工程
电气工程
复合材料
结晶学
化学
计算机科学
工程类
程序设计语言
作者
Yusuke Nakamura,Jakapan Chantana,Kota Takeguchi,Yu Kawano,Takahito Nishimura,Takashi Minemoto
标识
DOI:10.1016/j.ref.2022.12.003
摘要
Performance ratio and degradation rate of various-type silicon-based photovoltaic modules, which are multi-crystalline silicon, amorphous silicon, amorphous silicon/multi-crystalline silicon tandem, and amorphous silicon/amorphous silicon germanium/amorphous silicon germanium three-stack, were investigated after long exposure period up to about 20 years from 2000 to 2020 at outdoor site in Shiga-prefecture, Japan. Moreover, meteorological elements such as ambient temperature, and solar irradiance at outdoor location were investigated for approximately 20 years. Outdoor spectral distribution was observed in a year. It is disclosed that monthly performance ratio of multi-crystalline silicon module is inversely proportional to ambient temperature, whereas that of the amorphous silicon and tandem modules is positively proportional to ambient temperature. Degradation rate of the amorphous silicon module is the highest (3.776 %/year), and that of the tandem module is the second highest (1.338 %/year) of all silicon-based silicon modules after light exposure in the first period of the installation of the modules (≤10 years), implying performance ratio of amorphous silicon and tandem modules are more decreased than other type (multi-crystalline silicon and three-stack) modules. With longer years of the installation up to 20 years, degradation rate of each type of the modules is further decreased, suggesting that silicon-based modules become more stable after longer light exposure time.
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