Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap

Based on the increasing requirements for automotive power devices used in linear mode, which require both wider Safe Operating Area (SOA) performance and lower $R_{ds-on}$, SGT (RARS-SGT) with the Regional Allocate Resistance of Source is firstly developed in this paper. The performance of SOA is increased by 48% with the $\boldsymbol{\max I_{d}}$ raising to $20\mathbf{A}$, while it is 13.5 A for Conventional SGT (C-SGT) in condition of $V_{d}=V_{\mathrm{g}}$= 10 V and $\boldsymbol{PT=10}$ ms. In addition, it solves the problem that $R_{ds-on}$ is inevitably increasing in Channel Dummy SGT (CD-SGT) proposed by us earlier. The test and simulation results show that RARS-SGT has lower ZTC and weaker positive current-temperature feedback, because it sets up the self-ballast negative feedback mechanism to increase the source potential $V_{s}$ and further also suppress the trigger of parasitic NPN.