Theoretical Design of Rhombohedral-Stacked MoS2-Based Ferroelectric Tunneling Junctions with Ultra-High Tunneling Electroresistances

The sliding ferroelectrics formed by rhombohedral-stacked transition metal dichalcogenides (R-TMDs) greatly broaden the ferroelectric candidate materials. However, the weak ferroelectricity and many failure behaviors (such as irreversible lattice strains or defects) regulated by applied stimuli hinder their application. Here we systematically explore the interface electronic and transport properties of R-MoS