消散
材料科学
半导体
情态动词
聚合物
薄膜
光电子学
纳米技术
复合材料
物理
热力学
作者
Hung‐Chin Wu,Shayla Nikzad,Chong Zhu,Hongping Yan,Yang Li,Weijun Niu,James R. Matthews,Jie Xu,Naoji Matsuhisa,Prajwal Kammardi Arunachala,Reza Rastak,Christian Linder,Yu‐Qing Zheng,Michael F. Toney,Mingqian He,Zhenan Bao
标识
DOI:10.1038/s41467-023-44099-w
摘要
Abstract Stretchable polymer semiconductors (PSCs) have seen great advancements alongside the development of soft electronics. But it remains a challenge to simultaneously achieve high charge carrier mobility and stretchability. Herein, we report the finding that stretchable PSC thin films (<100-nm-thick) with high stretchability tend to exhibit multi-modal energy dissipation mechanisms and have a large relative stretchability ( rS ) defined by the ratio of the entropic energy dissipation to the enthalpic energy dissipation under strain. They effectively recovered the original molecular ordering, as well as electrical performance, after strain was released. The highest rS value with a model polymer (P4) exhibited an average charge carrier mobility of 0.2 cm 2 V −1 s −1 under 100% biaxial strain, while PSCs with low rS values showed irreversible morphology changes and rapid degradation of electrical performance under strain. These results suggest rS can be used as a parameter to compare the reliability and reversibility of stretchable PSC thin films.
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