消光比
波导管
材料科学
插入损耗
光子学
光电子学
硅光子学
绝缘体上的硅
波长
带宽(计算)
足迹
光开关
光子集成电路
光学
电信
硅
计算机科学
物理
生物
古生物学
作者
Hao Shi,Lei Zhang,Lin Wang,Zhenjiang Li,Yang Gao,Yanqing Wu,Renzhong Tai
出处
期刊:Journal of The Optical Society of America B-optical Physics
[The Optical Society]
日期:2023-08-02
卷期号:40 (9): 2365-2365
被引量:2
摘要
Utilization of phase change material in integrated photonic switches has gained significant attention due to its benefits of a broader bandwidth, higher switching contrast, smaller footprint, lower energy consumption, and better structural stability. In this paper, we propose an ultra-compact integrated photonic switch that utilizes a Ge 2 Sb 2 Se 4 Te 1 (GSST) nanodisk with a diameter of 440 nm inserted into a slot waveguide on a standard silicon on insulator, with a footprint of only 2.8×0.66µm 2 . A meta-structure mode conversion element is also proposed to be used in series with the slot GSST switch. Simulations of the photonic switch show that the insertion loss of the device during the “ON” state is below 0.564 dB, and the extinction ratio is above 12.846 dB over a large wavelength of 1210 to 1410 nm (covering the entire O band), with a peak value of 16.694 dB. The proposed photonic switch will find potential in various applications in optical communication systems and optical networks.
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