倒装芯片
球栅阵列
材料科学
分层(地质)
可靠性(半导体)
热铜柱凸点
互连
模具(集成电路)
研究对象
电子工程
复合材料
焊接
计算机科学
工程类
电信
图层(电子)
胶粘剂
纳米技术
生物
构造学
古生物学
功率(物理)
量子力学
物理
区域科学
俯冲
地理
作者
Xiang Li,Zhuqiu Wang,Xiao Qi He,Dan Yang,Na Mei
标识
DOI:10.1109/cstic58779.2023.10219324
摘要
The electronic components using flip chip bonding technology have high pin density, good thermal conductivity and excellent electrical performance, and are widely used in the telecommunications field. In this paper, -5000m$\mathrm{m}^{2}$ area 2. 5D FCBGA is taken as the research object, and the failure phenomenon of its key interconnect structure under temperature cycle is tested and simulated. In the test, it was found that ubump failed earlier than c4bump, and there were underfill delamination on both sides of the copper pillar with different bump structures. Then, the impact of underfill delamination on the stress of the bump is studied through finite element analysis, and the failure risks of the two kinds of bump structures are compared. Finally, it is proposed that proper underfill materials can reduce the failure risk of bump.
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