硅
材料科学
硅太阳电池
工程物理
光电子学
纳米技术
工程类
作者
Md. Anower Hossain,Bram Hoex
标识
DOI:10.1002/9781119578826.ch8
摘要
This chapter investigates the advancement of low-temperature deposited transition metal oxides (TMOs) in passivating contact for crystalline silicon (c–Si) solar cells. It addresses the growing need for carrier selective or passivating contacts in c–Si solar cells, a crucial step beyond the efficiency limits of diffused contacts. Focusing on the recent progress in device efficiency, the chapter highlights the role of TMOs in reducing electrical and optical losses at the semiconductor–metal contact interfaces. It explores the mechanisms by which TMOs, including silicon heterojunction and doped polysilicon, enhance solar cell efficiency by improving properties such as high transparency and low carrier recombination rates. Key concepts such as carrier selectivity are explained, and the chapter discusses the efficiency potential of various TMOs in c–Si solar cells. In addition, the chapter highlights the limitations of current passivating contacts and the potential of TMOs for both electron and hole transport, their interaction with c–Si, and their role in increasing solar cell efficiencies.
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