兴奋剂
碳纤维
材料科学
补偿(心理学)
化学物理
纳米技术
凝聚态物理
光电子学
化学
物理
复合材料
心理学
复合数
精神分析
作者
Zhaohua Shen,Xuelin Yang,Shan Wu,Huayang Huang,Xiaolan Yan,Ning Tang,Fujun Xu,Xinqiang Wang,Weikun Ge,Bing Huang,Bo Shen
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2023-03-01
卷期号:13 (3)
被引量:1
摘要
Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN.
科研通智能强力驱动
Strongly Powered by AbleSci AI