错配
钻石
跨导
欧姆接触
材料科学
光电子学
场效应晶体管
电极
半导体
晶体管
纳米技术
电气工程
化学
复合材料
图层(电子)
电压
物理化学
工程类
作者
Hiroaki Ishizaka,M. Tachiki,K. S. Song,Hamao Umezawa,Hiroshi Kawarada
标识
DOI:10.1016/s0925-9635(03)00208-5
摘要
Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator-semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.
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