材料科学
无定形碳
无定形固体
压力(语言学)
欧姆接触
碳纤维
四面体
相变
硅
电阻和电导
相(物质)
化学物理
复合材料
凝聚态物理
结晶学
冶金
图层(电子)
化学
有机化学
哲学
物理
复合数
语言学
作者
Desmond W. M. Lau,Dougal G. McCulloch,Matthew Taylor,J. G. Partridge,David R. McKenzie,Nigel A. Marks,Edwin Hang Tong Teo,Beng Kang Tay
标识
DOI:10.1103/physrevlett.100.176101
摘要
We demonstrate that when, and only when, the biaxial stress is increased above a critical value of $6\ifmmode\pm\else\textpm\fi{}1\text{ }\text{ }\mathrm{GPa}$ during the growth of a carbon film at room temperature, tetrahedral amorphous carbon is formed. This confirms that the stress present during the formation of an amorphous carbon film determines its $s{p}^{3}$ bonding fraction. In the vicinity of the critical stress, a highly oriented graphitelike material is formed which exhibits low electrical resistance and provides Ohmic contacts to silicon. Atomistic simulations reveal that the structural transitions are thermodynamically driven and not the result of dynamical effects.
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