铁电性
薄膜
物理
工程物理
纳米技术
纳米尺度
封面(代数)
光电子学
电介质
材料科学
机械工程
工程类
作者
Matthew Dawber,Karin M. Rabe,J. F. Scott
标识
DOI:10.1103/revmodphys.77.1083
摘要
This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.
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