电致发光
分流(医疗)
分析器
材料科学
光电子学
热成像
硅
光学
物理
图层(电子)
红外线的
纳米技术
医学
心脏病学
作者
Emi Sugimura,Sohichiroh Takamoto,Shinichiro Tsujii,Kenji Hirata,Ayumi Tani,Takashi Fuyuki
标识
DOI:10.1143/jjap.51.10na02
摘要
Electroluminescence (EL) under forward bias represents the total excess minority carrier density in cells. In contrast, EL under reverse bias can be detected as hot spots, which are closely related to harmful current shunt paths. In this study, we detected the shunt position using two kinds of EL. Additionally, we analyzed by the positions and origins of shunt sources using electron-beam-induced-current, lock-in thermography, and an electron-probe-micro analyser. We found two kinds of shunt and we detected a defect located in the depletion layer. We proposed shunt models in the depletion layer using the band model.
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