暗场显微术
材料科学
重置(财务)
相变存储器
扫描透射电子显微镜
透射电子显微镜
微观结构
无定形固体
扫描电子显微镜
能量色散X射线光谱学
光电子学
光学
显微镜
纳米技术
复合材料
物理
结晶学
化学
金融经济学
经济
图层(电子)
作者
J. Li,Kevin Brew,Kangguo Cheng,V. Chan,Nicole Arnold,Arthur Gasasira,R. Pujari,J. Demarest,M. Iwatake,L. Tierney,Odunayo Ogundipe,Kristen Toole,N. Li
出处
期刊:Proceedings
日期:2021-10-31
被引量:1
标识
DOI:10.31399/asm.cp.istfa2021p0206
摘要
Abstract In this work, we investigate mushroom type phase-change material (PCM) memory cells based on Ge2Sb2Te5. We use low-angle annular dark field (LAADF) STEM imaging and energy dispersive X-ray spectroscopy (EDX) to study changes in microstructure and elemental distributions in the PCM cells before and after SET and RESET conditions. We describe the microscope settings required to reveal the amorphous dome in the RESET state and present an application example involving the failure analysis of a PCM test array made with devices fabricated at IBM’s Albany AI Hardware Research Center.
科研通智能强力驱动
Strongly Powered by AbleSci AI