Gettering in silicon photovoltaics: A review

多晶硅 薄脆饼 材料科学 光伏 吸气剂 背景(考古学) 纳米技术 光电子学 单晶硅 光伏系统 晶体硅 太阳能电池 工程物理 电气工程 图层(电子) 薄膜晶体管 古生物学 工程类 生物
作者
AnYao Liu,Sieu Pheng Phang,Daniel Macdonald
出处
期刊:Solar Energy Materials and Solar Cells [Elsevier]
卷期号:234: 111447-111447 被引量:43
标识
DOI:10.1016/j.solmat.2021.111447
摘要

A key efficiency-limiting factor in silicon-based photovoltaic (PV) devices is the quality of the silicon material itself. With evolving cell architectures that better address other efficiency-loss channels in the device, the final device efficiency becomes increasingly sensitive to the contaminants in the silicon wafer bulk. However, due to cost constraints, silicon materials for PV are inherently less pure and further contamination during device fabrication is commonly found, especially in mass production environments. Metallic impurities are ubiquitous and abundant, and they are strong efficiency-loss channels in the device if not removed. Gettering is the process of removing metallic impurities to a less harmful region of the device, and is therefore an essential aspect of the cell fabrication process. This article presents an up-to-date review of the gettering techniques and processes in silicon solar cells, providing a complete picture of the possible gettering sinks and routes in various cell architectures. The article starts by explaining the common nomenclatures in gettering and summarising recent updates to the solubility and diffusivity data of the common 3d transition metals in silicon. Then the three-step gettering process (release, diffusion, capture) is explained, and its implications for solar-grade cast-grown silicon (in terms of release) and various cell architectures (in terms of diffusion) are discussed. The main focus of the article is to summarise and review the various capture approaches in the context of silicon PV. These include phosphorus diffusion, boron diffusion, selective doping via ion implantation, state-of-the-art polycrystalline-silicon/oxide passivating contact structures, dielectric films (silicon nitride and aluminium oxide), aluminium alloying, surface damaged regions including black silicon, and internal gettering in cast-grown silicon by existing crystallographic defects. Their gettering effects, current understanding of the gettering mechanisms, modelling, improvement strategies, implementation in processing and potential impacts on cell performance are reviewed.
最长约 10秒,即可获得该文献文件

科研通智能强力驱动
Strongly Powered by AbleSci AI
更新
大幅提高文件上传限制,最高150M (2024-4-1)

科研通是完全免费的文献互助平台,具备全网最快的应助速度,最高的求助完成率。 对每一个文献求助,科研通都将尽心尽力,给求助人一个满意的交代。
实时播报
hxl发布了新的文献求助10
刚刚
杰克李李完成签到,获得积分10
1秒前
xh完成签到,获得积分10
1秒前
lysun发布了新的文献求助10
1秒前
1秒前
3秒前
安成完成签到,获得积分10
3秒前
在水一方应助木辰采纳,获得10
3秒前
彭于晏应助王荣超采纳,获得10
3秒前
慕青应助醉书生采纳,获得10
3秒前
Ava应助RR采纳,获得10
3秒前
ListenLee应助冰刀采纳,获得10
4秒前
虚幻笑晴完成签到 ,获得积分10
4秒前
藏识完成签到,获得积分10
4秒前
无花果应助zxmine采纳,获得30
4秒前
香蕉觅云应助xwl采纳,获得10
5秒前
zdl关闭了zdl文献求助
5秒前
canjian1943完成签到,获得积分10
6秒前
yehaidadao完成签到,获得积分10
6秒前
寂寞的白凡完成签到,获得积分10
7秒前
旭宝儿发布了新的文献求助10
7秒前
茶博士完成签到,获得积分10
8秒前
8秒前
skr完成签到,获得积分10
8秒前
8秒前
9秒前
canjian1943发布了新的文献求助10
9秒前
9秒前
10秒前
10秒前
10秒前
FREE完成签到,获得积分10
10秒前
10秒前
重要友容发布了新的文献求助20
10秒前
ShuY完成签到,获得积分10
11秒前
王灿灿应助dd采纳,获得10
11秒前
dididi发布了新的文献求助10
12秒前
chen发布了新的文献求助10
12秒前
chizhi完成签到,获得积分10
12秒前
13秒前
高分求助中
Sustainability in Tides Chemistry 2800
The Young builders of New china : the visit of the delegation of the WFDY to the Chinese People's Republic 1000
юрские динозавры восточного забайкалья 800
English Wealden Fossils 700
Chen Hansheng: China’s Last Romantic Revolutionary 500
XAFS for Everyone 500
COSMETIC DERMATOLOGY & SKINCARE PRACTICE 388
热门求助领域 (近24小时)
化学 医学 生物 材料科学 工程类 有机化学 生物化学 物理 内科学 纳米技术 计算机科学 化学工程 复合材料 基因 遗传学 催化作用 物理化学 免疫学 量子力学 细胞生物学
热门帖子
关注 科研通微信公众号,转发送积分 3143246
求助须知:如何正确求助?哪些是违规求助? 2794391
关于积分的说明 7811052
捐赠科研通 2450640
什么是DOI,文献DOI怎么找? 1303909
科研通“疑难数据库(出版商)”最低求助积分说明 627144
版权声明 601386