Vertically stacked GaN/WX2 (X = S, Se, Te) heterostructures for photocatalysts and photoelectronic devices

(a) Absorption spectrum of GaN/WX 2 (X = S, Se, Te) heterostructures. (b) Schematic plot of the migration of photogenerated electrons and holes at the GaN/WS 2 interface. (c) Band-edge alignments of GaN/WX 2 heterostructures.