Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory

Magnetoelectric (ME) switching energy is the most important aspect in the practical application of antiferromagnetic (AFM) Cr 2 O 3 ‐based perpendicular exchange‐coupling heterostructures, but it is not fully understood. This study firstly clarifies the relation between the applied magnetic/electric field and surface spin directions (domain status) as well as the perpendicular exchange bias sign in this system. Secondly, the asymmetric ME switching behavior for both Cr 2 O 3 and its perpendicular exchange‐coupling heterostructures is discussed. Finally, a model is developed to examine the energy required during the ME switching of the above system. It was found that the surface status and microstructure of Cr 2 O 3 are essential factors influencing the system's ME switching energy. This work contributes to realizing low‐energy information writing for AFM Cr 2 O 3 used in spintronic logic devices and memory.