材料科学
纳米线
纳米技术
电极
光电子学
氧化物
氧化铟锡
带隙
去湿
荫罩
薄膜
计算机科学
计算机图形学(图像)
物理化学
化学
冶金
作者
Tiantian Dai,Zanhong Deng,Xiaodong Fang,Huadong Lu,Yong He,Junqing Chang,Shimao Wang,Nengwei Zhu,Liang Li,Gang Meng
标识
DOI:10.1002/smtd.202100202
摘要
Seeking a facile approach to directly assemble bridged metal oxide nanowires on substrates with predefined electrodes without the need for complex postsynthesis alignment and/or device procedures will bridge the gap between fundamental research and practical applications for diverse biochemical sensing, electronic, optoelectronic, and energy storage devices. Herein, regularly bridged CuO microhemisphere nanowire arrays (RB-MNAs) are rationally designed on indium tin oxide electrodes via thermal oxidation of ordered Cu microhemisphere arrays obtained by solid-state dewetting of patterned Ag/Cu/Ag films. Both the position and spacing of CuO microhemisphere nanowires can be well controlled by as-used shadow mask and the thickness of Cu film, which allows homogeneous manipulation of the bridging of adjacent nanowires grown from neighboring CuO hemispheres, and thus benefits highly sensitive trimethylamine (TMA) sensors and broad band (UV-visible to infrared) photodetectors. The electrical response of 3.62 toward 100 ppm TMA is comparable to that of state-of-the-art CuO-based sensors. Together with the feasibility of in situ assembly of RB-MNAs device arrays via common lithographic technologies, this work promises commercial device applications of CuO nanowires.
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