InGaAs/InP SWIR unipolar barrier photodetector structure

The investigation of the doping level influence and p-n junction location in the barrier photodetector with InGaAS/AlInAs on InP was carried out. The detectivity value is determined by the differential resistance and it is related to the photosensitive layer doping level. I t was detected that the differential resistance is decreased due to doping. At the same time the peal detectivity can be reached at lower voltage. The barriers and contact layers thicknesses optimization are the important tools for quantum efficiency optimization.