光学
失真(音乐)
方向错误
材料科学
样品(材料)
显微照片
电子显微照片
衍射
电子显微镜
物理
光电子学
微观结构
热力学
冶金
放大器
晶界
CMOS芯片
标识
DOI:10.1111/j.1365-2818.2006.01536.x
摘要
Summary Lattice‐distortion analysis from high‐resolution transmission electron micrographs offers a convenient and fast tool for direct measurement of strains in materials over a large area. In the present work, we have evaluated the accuracy of the strain measurement when the effects of the realistic experimental variables are explicitly taken into account by the use of image simulation techniques. These variables are focal setting and variation, local thickness and orientation of the sample, as well as misalignments of the sample and the incident beam. The evaluation reveals that consistency of image features and contrast within the micrographs is desired for the analysis to eliminate effects of the variations of local focus value and specimen thickness. After proper orientation of a crystalline specimen, the misorientation of the object will not notably influence the strain measurement even though a local bending may exist within the sample. However, the incident beam of the microscope needs to be aligned carefully as the beam misalignment may introduce a notable artefact around the interface region.
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