Analysis of flicker noise in two-dimensional multilayer MoS2 transistors

Using low-frequency noise (LFN) analysis, we examined the quality of the semiconductor, oxide, and oxide–semiconductor interface of back-gated multilayer MoS2 transistors. We also investigated the mechanism of the LFN and extracted γ exponents from the LFN behavior, 1/fγ; the value of γ was >1 at negative gate bias because of active slow traps. As VG increased, the slow traps were filled and thus γ decreased, stabilizing at ≈0.95. Various other parameters extracted from the LFN indicated that the carrier number fluctuation (Δn) model was the dominant origin of the LFN. The multilayer MoS2 structure had better noise immunity than a single-layer case in air.