期刊:Physica Scripta [IOP Publishing] 日期:1982-01-01卷期号:T1: 33-37被引量:5
标识
DOI:10.1088/0031-8949/1982/t1/013
摘要
Modern theoretical approaches and computational techniques coupled with the development of spectroscopies for probing surfaces experimentally have given a new impetus to the study of those mechanisms controlling Schottky barrier formation. It is now known that interfaces between metals and clean semiconductors are rarely abrupt and fully ordered. In this article the influence of imperfections at the interface and their role in Schottky barrier formation are considered.