肖特基势垒
肖特基二极管
材料科学
半导体
接口(物质)
金属半导体结
纳米技术
工程物理
化学物理
光电子学
凝聚态物理
物理
毛细管数
二极管
复合材料
毛细管作用
标识
DOI:10.1088/0031-8949/1982/t1/013
摘要
Modern theoretical approaches and computational techniques coupled with the development of spectroscopies for probing surfaces experimentally have given a new impetus to the study of those mechanisms controlling Schottky barrier formation. It is now known that interfaces between metals and clean semiconductors are rarely abrupt and fully ordered. In this article the influence of imperfections at the interface and their role in Schottky barrier formation are considered.
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