谐振器
小型化
材料科学
带宽(计算)
机电耦合系数
光电子学
声表面波
电子工程
电气工程
压电
计算机科学
声学
电信
工程类
物理
纳米技术
复合材料
作者
Tokihiro Nishihara,Tsuyoshi Yokoyama,Takuya Miyashita,Y. Satoh
标识
DOI:10.1109/ultsym.2002.1193557
摘要
Fujitsu has developed high-performance, miniature aluminum nitride (AlN) thin Film Bulk Acoustic Resonators (FBAR) filters for 5-GHz Wireless Local Area Network (WLAN) applications. Filters with higher frequencies of around 5 GHz and wider bandwidths will be needed in future mobile communication systems. Therefore, we developed filters using thin-film Bulk Acoustic Wave (BAW) technology, which shows promise as a possible solution to these higher frequency applications. There are two issues related to the development of FBAR filters. The first has been the need for miniaturization. To achieve this, we developed a new resonator configuration that employs bulk micromachining techniques. The second issue has been to increase the bandwidth. Five-GHz WLAN applications require a 200-MHz bandwidth at 5250 MHz, which corresponds to a fractional bandwidth of 3.8%. However, the piezoelectric coupling coefficient (k/sup 2/) of AlN cannot satisfy this requirement. To achieve wider filter bandwidth, we developed two approaches. They utilize epitaxial AlN film-growth and reactance-controlled flip-chip package design technologies. The packaging technology also enabled us to miniaturize the filters.
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