材料科学
接触电阻
掺杂剂
兴奋剂
光电子学
晶体管
场效应晶体管
有机半导体
阈下摆动
半导体
纳米技术
图层(电子)
电气工程
工程类
电压
作者
Peter Darmawan,Takeo Minari,Yong Xu,Songlin Li,Haisheng Song,Meiyin Chan,Kazuhito Tsukagoshi
标识
DOI:10.1002/adfm.201201094
摘要
Abstract A low contact resistance achieved on top‐gated organic field‐effect transistors by using coplanar and pseudo‐staggered device architectures, as well as the introduction of a dopant layer, is reported. The top‐gated structure effectively minimizes the access resistance from the contact to the channel region and the charge‐injection barrier is suppressed by doping of iron(III)trichloride at the metal/organic semiconductor interface. Compared with conventional bottom‐gated staggered devices, a remarkably low contact resistance of 0.1–0.2 kΩ cm is extracted from the top‐gated devices by the modified transfer line method. The top‐gated devices using thienoacene compound as a semiconductor exhibit a high average field‐effect mobility of 5.5–5.7 cm 2 V −1 s −1 and an acceptable subthreshold swing of 0.23–0.24 V dec −1 without degradation in the on/off ratio of ≈10 9 . Based on these experimental achievements, an optimal device structure for a high‐performance organic transistor is proposed.
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