激子
带隙
结合能
纤锌矿晶体结构
材料科学
半导体
带偏移量
从头算
分子物理学
吸收光谱法
凝聚态物理
化学物理
光电子学
化学
原子物理学
物理
光学
锌
价带
有机化学
冶金
作者
Diana Y. Qiu,Felipe H. da Jornada,Steven G. Louie
出处
期刊:Nano Letters
[American Chemical Society]
日期:2017-07-05
卷期号:17 (8): 4706-4712
被引量:172
标识
DOI:10.1021/acs.nanolett.7b01365
摘要
Few-layer black phosphorus has recently emerged as a promising 2D semiconductor, notable for its widely tunable bandgap, highly anisotropic properties, and theoretically predicted large exciton binding energies. To avoid degradation, it has become common practice to encapsulate black phosphorus devices. It is generally assumed that this encapsulation does not qualitatively affect their optical properties. Here, we show that the contrary is true. We have performed ab initio GW and GW plus Bethe-Salpeter equation (GW-BSE) calculations to determine the quasiparticle (QP) band structure and optical spectrum of one-layer (1L) through four-layer (4L) black phosphorus, with and without encapsulation between hexagonal boron nitride and sapphire. We show that black phosphorus is exceptionally sensitive to environmental screening. Encapsulation reduces the exciton binding energy in 1L by as much as 70% and completely eliminates the presence of a bound exciton in the 4L structure. The reduction in the exciton binding energies is offset by a similarly large renormalization of the QP bandgap so that the optical gap remains nearly unchanged, but the nature of the excited states and the qualitative features of the absorption spectrum change dramatically.
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