铁电性
压电
压电响应力显微镜
材料科学
拉曼光谱
范德瓦尔斯力
极化
肖特基势垒
凝聚态物理
光电子学
极化(电化学)
纳米技术
光学
电介质
化学
物理
二极管
物理化学
复合材料
分子
有机化学
作者
Yu Zhou,Di Wu,Yihan Zhu,Yujin Cho,Qing He,Xiao Yang,Kevin Herrera,Zhaodong Chu,Yu Han,M. C. Downer,Hailin Peng,Keji Lai
出处
期刊:Nano Letters
[American Chemical Society]
日期:2017-08-25
卷期号:17 (9): 5508-5513
被引量:650
标识
DOI:10.1021/acs.nanolett.7b02198
摘要
Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered ${\alpha}$-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the ${\alpha}$-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for ${\alpha}$-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar ${\alpha}$-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.
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