中间层
电容器
可扩展性
电源完整性
集成电路
去耦电容器
计算机科学
解耦(概率)
电气工程
互连
带宽(计算)
材料科学
电子工程
光电子学
信号完整性
电压
工程类
纳米技术
电信
操作系统
蚀刻(微加工)
图层(电子)
控制工程
作者
Mu-Shan Lin,M.S. Liu,Hsien‐Wei Chen,S.M. Chen,M. C. Yew,C.S. Chen,Shin-Puu Jeng
标识
DOI:10.1109/ectc51906.2022.00008
摘要
Organic interposer (CoWoS-R) technology is one of the most promising heterogeneous integration platforms for high performance computing (HPC) applications. Components such as chiplets, high-bandwidth memory (HBM), and passives can be integrated into an organic interposer with excellent yield and reliability. CoWoS-R provides low RC interconnect with good signal isolation and design scalability. The new organic interposer CoWoS-R + (plus) successfully integrates both a large amount of high density IPD (integrated passive device) and fine pitch Si-based connection block for convenient IP migration. IPD serves as decoupling (de-cap) capacitor, which is critical to the high-speed data operations in advanced logic circuits, where stable voltage supplies are required. The distance between SOC devices and capacitors is minimized to assure fast response. The feeding resistance is greatly reduced by thick power mesh and bump via in the organic interposer. The advantages in connectivity and power integrity of new CoWoS-R + (plus) technology are presented.
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