纤锌矿晶体结构
氮化硼
材料科学
密度泛函理论
变形(气象学)
带隙
拉伤
从头算
异质结
氮化物
从头算量子化学方法
凝聚态物理
局部密度近似
硼
宽禁带半导体
计算化学
化学物理
纳米技术
光电子学
复合材料
化学
量子力学
物理
冶金
分子
锌
医学
图层(电子)
内科学
有机化学
作者
Thomas P. Sheerin,Stefan Schulz
标识
DOI:10.1002/pssr.202200021
摘要
Boron‐containing III‐nitride heterostructures have recently attracted significant attention for improving the efficiency of visible and UV light emitters. However, the fundamental material properties of wurtzite (WZ) boron nitride (BN) are largely unexplored. Here, highly accurate first‐principles calculations are used to gain insight into internal strain, elastic constants, and electronic band structure deformation potentials. These parameters are key ingredients for simulating, and thus predicting, electronic and optical properties of boron‐containing III‐nitride‐based light emitters. The ab initio calculations show, for instance, that the quasi‐cubic approximation for deformation potentials is a poor approximation for WZ BN.
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