Enhanced Resonant Energy Transfer by Decorating Au Nanoparticles on the Sidewalls of InGaN Multiple‐Quantum‐Well Nanorods

An enhanced resonant energy transfer (RET) process between green InGaN multiple quantum wells (MQWs) and CdSe/ZnS quantum dots (QDs) is investigated by decorating the sidewalls of InGaN MQW nanorods with Au nanoparticles. The InGaN MQW nanorods are shallow‐etched to the region of InGaN MQWs or deep‐etched through InGaN MQWs completely. The Au nanoparticles can provide localized surface plasmon coupling to both InGaN MQWs and QDs, leading to accelerated decay rates. The localized surface plasmons also enhance the RET process between InGaN MQWs and QDs. Compared to the bare nanorods without Au nanoparticles, the enhancement factors of the RET process are 1.8 and 5.6 for shallow‐ and deep‐etched MQW nanorods, respectively. The larger enhancement factor for deep‐etched nanorods is mainly attributed to the weaker localized surface plasmon coupling with InGaN MQWs, which is proposed to compete with the RET process. The RET efficiency in the deep‐etched InGaN MQW nanorods is calculated as 62%, demonstrating high potential for usage in energy conversion devices.