Passivation-free high performance self-powered photodetector based on Si nanostructure-PEDOT:PSS hybrid heterojunction

Hybrid heterojunction between organic PEDOT:PSS and inorganic Silicon (Si) nanostructures is promising for high-performance self-powered photodetectors due to their favourable band energetics and ease of processing. Traditionally, Si nanostructures require additional passivation layers to reduce surface defect states, which adds complexity and involves the use of harmful organic solvents. Here in, we demonstrate a simple chemical polishing process to reduce defects and fabricate a conformable heterojunction between Si nanostructures and PEDOT:PSS. Si nanostructures fabricated by metal-assisted chemical etching (MACE) technique and subsequently treated by the chemical polishing process are spin-coated with PEDOT:PSS to form heterojunction and employed as self-powered broadband photodetector. The optimized device shows superior performance, such as high responsivity of 555.34 mA/W, quick rise/fall times of 79 ms/81 ms, high External Quantum Efficiency (EQE) of 0.8 at zero bias (0 V) and high photostability up to 500 illumination cycles. Dark I-V characteristics and carrier lifetime measurements reveal that the enhanced performance of chemically polished devices is attributed to the formation of a conformable heterojunction and reduction in defects in the Si nanostructures. Given the scalability and simplicity of the demonstrated passivation-free approach, this work may aid the fabrication of high-performance hybrid Si nanostructured photodetectors.