Accelerating GW Calculations of Point Defects with the Defect-Patched Screening Approximation

The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with the many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conduction states of supercells and significantly reduces the simulation cost. We have applied it to calculate various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results are consistent with those from the direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.