工艺CAD
节点(物理)
半导体器件
接口(物质)
高电子迁移率晶体管
电子工程
计算机科学
工程类
电气工程
计算机辅助设计
材料科学
纳米技术
晶体管
图层(电子)
工程制图
电压
并行计算
气泡
最大气泡压力法
结构工程
作者
Joy Chowdhury,Jitendra Kumar Das,Angsuman Sarkar,Kamalakanta Mohapatra
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2023-01-01
卷期号:: 409-455
标识
DOI:10.1016/b978-0-323-91832-9.00009-9
摘要
The modern technology computer-aided design (TCAD) for semiconductor devices enables designers to design and simulate semiconductor devices based on present technology node as per International Technology Roadmap for Semiconductors. This chapter covers brief introduction to the TCAD tools, Sentaurus and SILVACO interface, describing the process of structural modeling, setting up the simulation environment and simulating the device, and analyzing the results of simulation. It also enables researchers to get hold of the TCAD tool for device modeling in the nanometer regime. Hands-on approaches to the TCAD (Sentaurus & SILVACO) have been presented along with codes for few state-of-the-art devices like TFET, HEMT, FINFET, etc.
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