低语长廊波浪
激光阈值
材料科学
窃窃私语画廊
光电子学
图层(电子)
宽禁带半导体
光学
谐振器
纳米技术
物理
波长
作者
Yuyin Li,Jing Zhou,Ziwen Yan,Xianfei Zhang,Zili Xie,Xiangqian Xiu,Dunjun Chen,Bin Liu,Hong Zhao,Yi Shi,Rong Zhang,Youdou Zheng,Peng Chen
摘要
This paper details the fabrication of GaN-based microdisks with a single porous n-GaN layer positioned beneath the multiple quantum wells region on a modified green light-emitting diode epiwafer. Simulations of the longitudinal light field distribution reveal effective confinement of the light field within the multiple quantum wells region due to the presence of the single porous layer. The porous layer also demonstrates sufficient conductivity as determined through calculations and serves as an effective method for thermal dispersion. Under optical pumping, all microdisks exhibit clear whispering gallery mode (WGM) lasing at room temperature, with the lowest threshold of 13.50 μJ/cm2 achieved in a 2-μm-diameter microdisk. These findings suggest that integrating the single porous layer into GaN microdisks is a highly promising approach for achieving high-efficiency WGM micro-laser diodes with effective electrical injection and heat dispersion.
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