Barrier Polarity Reversal Based on Interfacial Modification of Au Nanoparticles for Nonvolatile Multilevel Memory and Optoelectronic Synapses

Optoelectronic synaptic devices, integrating light sensing and information processing capabilities, have emerged as advantageous tools for the implementation of visual neuromorphic computing. However, the transient light-triggered response characteristic typically results in unstable memory retention times and restricted current response ranges, posing significant challenges to the development and practical application of neural network systems. In response to these limitations, this study developed a nonvolatile optoelectronic memory based on the indium tin oxide (ITO)/Au nanoparticles (NPs)/amorphous Ga