材料科学
光致发光
二极管
钝化
钙钛矿(结构)
发光二极管
化学工程
光电子学
纳米技术
图层(电子)
工程类
作者
Xiong Shen,Gaozhao Chen,Xin Peng,Fanfan Qi,Liu He,Wentao Hao,Qiuyun Ouyang
出处
期刊:Langmuir
[American Chemical Society]
日期:2024-12-27
标识
DOI:10.1021/acs.langmuir.4c03070
摘要
Due to intrinsic defects in blue-light-emitting perovskite materials, the charge carriers are prone to being trapped by the trap states. Therefore, the preparation of efficient blue-light-emitting perovskite materials remains a significant challenge. Herein, CsPb(Cl/Br)3 nanocrystal (NCs)@SiO2 structures were fabricated through hydrolyzing (3-aminopropyl)-triethoxysilane (APTS). SiO2 can passivate the surface trap states of NCs, suppress the nonradiative recombination pathways of NCs, and effectively stabilize the surface of NCs. CsPb(Cl/Br)3 NCs@SiO2 exhibits higher photoluminescence (PL) intensity and lifetime compared to those of the pure CsPb(Cl/Br)3 NCs. The enhancement of the exciton binding energy (Eb) leads to increased PL intensity and lifetime in CsPb(Cl/Br)3 NCs @SiO2, as demonstrated by temperature-dependent PL spectra. Subsequently, a 0.3 mm film of CsPb(Cl/Br)3 NCs@SiO2/poly(methyl methacrylate) (PMMA) was fabricated through optimizing the casting method. Due to the effective protection provided by SiO2 and PMMA, CsPb(Cl/Br)3 NCs@SiO2/PMMA film exhibits excellent thermal, water, and air stability. Moreover, the CsPb(Cl/Br)3 NCs@SiO2/PMMA film also exhibits good flexibility, maintaining the PL intensity unchanged under bending conditions. Importantly, lead can be well encapsulated in SiO2 and PMMA, effectively preventing lead from leaking into the environment. This research demonstrates the potential of a CsPb(Cl/Br)3 NCs@SiO2/PMMA film for applications in the friendly environmental field of optoelectronics, including light-emitting diodes (LEDs) and flexible displays.
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