Low breakdown voltage and high speed Avalanche Photodiode Based on SOI substrate

A novel lateral avalanche photodiode (APD) is presented. By taking advantage of Silicon-On-Insulator (SOI) substrate combined with separation absorption multiplier(SAM) structure, the demonstrated APDs exhibit wide bandwidth (13.2 GHz) and high gain (148). Furthermore, the minimum breakdown voltage of the measured device is 6.1V.