神经形态工程学
记忆电阻器
材料科学
能量(信号处理)
计算机科学
纳米技术
工程物理
计算机体系结构
电子工程
物理
人工神经网络
工程类
人工智能
量子力学
作者
Moon‐Seok Kim,Sungho Kim
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2024-05-30
卷期号:6 (6): 3998-4015
被引量:1
标识
DOI:10.1021/acsaelm.4c00428
摘要
This review presents a comparative analysis of the analog switching performance of oxide- and two-dimensional (2D)-material-based memristors, focusing on their application in neuromorphic computing systems. This study examines various performance metrics such as endurance, energy consumption, and switching characteristics to elucidate how these parameters are influenced by the unique characteristics of the respective materials. By examining both oxide- and 2D-material-based memristors in array configurations, this review provides insights into their suitability for neuromorphic computing, highlighting advancements, challenges, and future research directions in memristor technology.
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