神经形态工程学
记忆电阻器
能源消耗
材料科学
高效能源利用
能量(信号处理)
计算机科学
纳米技术
计算机体系结构
电子工程
物理
人工神经网络
电气工程
工程类
人工智能
量子力学
作者
Moon‐Seok Kim,Sungho Kim
标识
DOI:10.1021/acsaelm.4c00428
摘要
This review presents a comparative analysis of the analog switching performance of oxide- and two-dimensional (2D)-material-based memristors, focusing on their application in neuromorphic computing systems. This study examines various performance metrics such as endurance, energy consumption, and switching characteristics to elucidate how these parameters are influenced by the unique characteristics of the respective materials. By examining both oxide- and 2D-material-based memristors in array configurations, this review provides insights into their suitability for neuromorphic computing, highlighting advancements, challenges, and future research directions in memristor technology.
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