尼亚尔
材料科学
图层(电子)
热稳定性
电阻率和电导率
互连
透射电子显微镜
复合材料
光电子学
纳米技术
化学工程
金属间化合物
电气工程
计算机科学
工程类
合金
计算机网络
作者
Kyeong‐Youn Song,Seungjun Na,Hoon Choi,Hoo-Jeong Lee
标识
DOI:10.35848/1882-0786/acbf01
摘要
Abstract This letter reports on the study of employing an Al capping layer to improve the thermal stability of NiAl films for advanced interconnect applications. We prepare NiAl films with an Al capping layer of various thicknesses. Transmission electron microscopy analysis of NiAl with a 1 nm thick capping layer annealed at 450 °C discloses an effective suppression of Al out-diffusion from the NiAl layer and hence enhanced thermal stability. Measurement of thickness-dependent resistivity unravels a much slower resistivity increase for the capping layer sample than that of the sample without capping layer and low resistivity below 10 nm (49.7 μ Ω·cm for 3.2 nm).
科研通智能强力驱动
Strongly Powered by AbleSci AI