Structural properties of a-SiOx:H films studied by an improved infrared-transmission analysis method

An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared (IR) transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials (a-SiOx:H) are investigated. The oxygen-concentration-dependent variation of the Si—O—Si and the Si—H related modes in a-SiOx:H materials is discussed in detail.