磁电阻
自旋电子学
凝聚态物理
铁磁性
霍尔效应
磁场
半导体器件
半导体
材料科学
领域(数学)
物理
光电子学
纳米技术
图层(电子)
量子力学
纯数学
数学
作者
Jinki Hong,Sungjung Joo,Tae-Suk Kim,Kungwon Rhie,K. H. Kim,S. U. Kim,B. C. Lee,Kyung-Ho Shin
摘要
The authors have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.
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