Cuprous iodide - a p-type transparent semiconductor: history and novel applications

physica status solidi (a)Volume 210, Issue 9 p. 1671-1703 Review Article Cuprous iodide – a p-type transparent semiconductor: history and novel applications Marius Grundmann, Corresponding Author Marius Grundmann Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanyCorresponding author: e-mail grundmann@physik.uni-leipzig.de, Phone: +49-341-9732650, Fax: +49-341-9732668Search for more papers by this authorFriedrich-Leonhard Schein, Friedrich-Leonhard Schein Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorMichael Lorenz, Michael Lorenz Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorTammo Böntgen, Tammo Böntgen Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorJörg Lenzner, Jörg Lenzner Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorHolger von Wenckstern, Holger von Wenckstern Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this author Marius Grundmann, Corresponding Author Marius Grundmann Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanyCorresponding author: e-mail grundmann@physik.uni-leipzig.de, Phone: +49-341-9732650, Fax: +49-341-9732668Search for more papers by this authorFriedrich-Leonhard Schein, Friedrich-Leonhard Schein Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorMichael Lorenz, Michael Lorenz Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorTammo Böntgen, Tammo Böntgen Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorJörg Lenzner, Jörg Lenzner Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this authorHolger von Wenckstern, Holger von Wenckstern Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, GermanySearch for more papers by this author First published: 12 August 2013 https://doi.org/10.1002/pssa.201329349Citations: 124Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p-CuI/n-ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ-CuI(111) thin film on glass (1 × 1 cm2) and IV-characteristics of p-CuI/n-ZnO/a-Al2O3 bipolar heterojunction diode. Citing Literature Volume210, Issue9September 2013Pages 1671-1703 RelatedInformation