电容器
电阻器
要素(刑法)
电感器
线性化
计算机科学
电容电路
记忆电阻器
物理
拓扑(电路)
电气元件
电气工程
电压
工程类
量子力学
非线性系统
法学
政治学
出处
期刊:IEEE Transactions on Circuit Theory
[Institute of Electrical and Electronics Engineers]
日期:1971-01-01
卷期号:18 (5): 507-519
被引量:8825
标识
DOI:10.1109/tct.1971.1083337
摘要
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{- \infty}^{t} v(\tau) d \tau is introduced as the fourth basic circuit element. An electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented. Many circuit-theoretic properties of memistors are derived. It is shown that this element exhibits some peculiar behavior different from that exhibited by resistors, inductors, or capacitors. These properties lead to a number of unique applications which cannot be realized with RLC networks alone. Although a physical memristor device without internal power supply has not yet been discovered, operational laboratory models have been built with the help of active circuits. Experimental results are presented to demonstrate the properties and potential applications of memristors.
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