异质结
并五苯
材料科学
范德瓦尔斯力
激子
光电子学
有机半导体
单层
有机太阳能电池
光激发
化学物理
激发态
化学
纳米技术
原子物理学
凝聚态物理
分子
聚合物
物理
薄膜晶体管
复合材料
有机化学
图层(电子)
作者
Stephanie Bettis Homan,Vinod K. Sangwan,Itamar Balla,Hadallia Bergeron,Emily A. Weiss,Mark C. Hersam
出处
期刊:Nano Letters
[American Chemical Society]
日期:2016-12-05
卷期号:17 (1): 164-169
被引量:214
标识
DOI:10.1021/acs.nanolett.6b03704
摘要
van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed-dimensional p–n heterojunction diodes, such as p-type pentacene (0D) and n-type monolayer MoS2 (2D), are especially interesting for photovoltaic applications where the absorption cross-section and charge transfer processes can be tailored by rational selection from the vast library of organic molecules and 2D materials. Here, we study the kinetics of excited carriers in pentacene–MoS2 p–n type-II heterojunctions by transient absorption spectroscopy. These measurements show that the dissociation of MoS2 excitons occurs by hole transfer to pentacene on the time scale of 6.7 ps. In addition, the charge-separated state lives for 5.1 ns, up to an order of magnitude longer than the recombination lifetimes from previously reported 2D material heterojunctions. By studying the fractional amplitudes of the MoS2 decay processes, the hole transfer yield from MoS2 to pentacene is found to be ∼50%, with the remaining holes undergoing trapping due to surface defects. Overall, the ultrafast charge transfer and long-lived charge-separated state in pentacene–MoS2 p–n heterojunctions suggest significant promise for mixed-dimensional van der Waals heterostructures in photovoltaics, photodetectors, and related optoelectronic technologies.
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