Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

Ferroelectric Tunnel Junction Devices In article number 2300080, Jihyung Kim, Dahye Kim, Sungjun Kim, and colleagues demonstrate synaptic functions with a CMOS compatible HfAlOx-based ferroelectric tunnel junction (FTJ) device. Neuroinspired engineering based on an emerging memory is promising to overcome the limitations of von Neumann computing and conventional memories. The FTJ device is also used as a physical reservoir depending on its own properties in reservoir computing. This computing architecture is for processing sequential and temporal inputs based on the biological nervous system.