退火(玻璃)
旋涂
薄膜
半导体
材料科学
电阻率和电导率
铜
霍尔效应
光电子学
分析化学(期刊)
复合材料
冶金
纳米技术
化学
电气工程
工程类
色谱法
作者
Sameer Ranjan Biswal,Jyoti Prakash Kar
标识
DOI:10.1016/j.matpr.2022.11.504
摘要
Copper Iodide (CuI) is a p-type semiconductor that is an inorganic semiconductor with significant applications in the thin film. It has potential application in solar cells as a hole transport layer, done by spin coating technique with annealing. The Hall-measurement system investigated the different annealing temperatures of solution-processed CuI thin films. The CuI thin films were p-type semiconductors with resistivities of 0.5–7.4 Ω cm, a carrier concentration of ∼ 1019 cm−3, and mobility of < 24 cm2 V−1 s−1, respectively. It was found that by increasing the annealing temperature above 220 °C, the resistivity of CuI thin films also decreased.
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