X射线光电子能谱
材料科学
密度泛函理论
离子注入
微观结构
拉曼光谱
透射电子显微镜
退火(玻璃)
兴奋剂
离子
价(化学)
分析化学(期刊)
光电子学
纳米技术
化学
计算化学
物理
核磁共振
冶金
光学
有机化学
色谱法
作者
Fanzhengshu Wu,Jie Zhang,Wei Xi,Yanqing Chi,Qibin Liu,Lei Yang,Hong-Ping Ma,Qing‐Chun Zhang
标识
DOI:10.1016/j.apsusc.2022.156014
摘要
In this study, Al implantation in 4H-SiC at the dose of 1 × 1014 cm−2 was investigated. The impacts of implantation temperature on the lattice quality, microstructure, surface composition, and band structure were all studied experimentally and theoretically. Atomic force microscope (AFM) images showed the difference in surface morphology between high-temperature and low-temperature implantation. Transmission electron microscopy (TEM) characterization indicated the lattice damage induced by implantation was recovered after the post-annealing at 1750 °C, except for the samples implanted at room temperature. X-ray photoelectron spectroscopy (XPS) analysis suggested an oxidation effect during and after the implantation process, and it was more serious at lower implantation temperatures. As the implantation temperature incremented, the ratio of Si-C composition with high binding energy increased, the element valence became closer to that of ideal Al-doped 4H-SiC calculated by density functional theory (DFT); and the Fermi level shifted toward the valence band maximum (VBM), demonstrating the formation of efficient p-type doping. A more obvious asymmetric broadening in Raman spectroscopy was observed at higher implantation temperature. The theoretically obtained band structures and bond lengths from DFT calculations corroborated the experimental results, providing physical insights into the possible effect mechanism. In sum, correlations between the implantation process, external material properties, and internal crystal structure were recorded, paving the way for further research and future applications.
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