Junctionless Electric‐Double‐Layer Thin‐Film Transistors with Logic Functions

Herein, junctionless thin‐film transistors (TFT) with indium‐oxide (In 2 O 3 ) as the n‐channel active layer are prepared on transparent substrates by magnetron sputtering at room temperature. Chitosan with an electric‐double‐layer (EDL) effect as a gate dielectric enables the device to achieve low‐voltage operation, thus reducing energy consumption. The device maintains its performance in dark or illuminated conditions and has good performance with a mobility of 0.21 cm 2 V −1 s −1 , a current on/off ratio of 6.5 × 10 6 , and a subthreshold swing of 66 mV decade −1 . The device implements “OR” and “AND” logic functions at different voltage levels. The In 2 O 3 TFT is ideally suited for prospective applications in large‐area electronics and flexible electronics due to its exceptional device performance and low fabrication temperature.