High-performance self-powered ultraviolet photodetector based on Ga2O3/GaN heterostructure for optical imaging

光电探测器 紫外线 光电子学 异质结 材料科学 暗电流 肖特基势垒 波段图 纳米线 氮化镓 光学 物理 纳米技术 图层(电子) 二极管
作者
Siyu Feng,Zitong Liu,Lizhi Feng,Junchao Wang,Hanning Xu,Lijie Deng,Ouxiang Zhou,Xin Jiang,Baodan Liu,Xinglai Zhang
出处
期刊:Journal of Alloys and Compounds [Elsevier BV]
卷期号:945: 169274-169274 被引量:57
标识
DOI:10.1016/j.jallcom.2023.169274
摘要

Gallium oxide (Ga2O3) has attracted much attention for its ultra-wide band gap and superior optoelectronic properties in the field of ultraviolet (UV) photodetectors. However, Ga2O3-based photodetectors still face problems such as slow response speed, large dark current and high power consumption. In this work, we design an n-Ga2O3/p-GaN vertical heterojunction in a transverse device and use it to construct a high-performance UV photodetector. The GaN film directly connects to the electrodes, while the Ga2O3 nanowires cover the top surface of the GaN and do not contact with any electrode. Based on this unique heterostructure, the photodetector demonstrates a low dark current and fast photoresponse speed under 254 nm irradiation. On the other hand, the photodetector can be operated at 0 V bias due to asymmetric Schottky barriers caused by the difference in electrode size. The photoresponse, specific detectivity and photoresponse speed of the photodetector are calculated to be 44.98 mA/W, 5.33 × 1011 Jones and 383 ms, respectively, under self-powered mode. The enhanced UV photoresponse and self-powered mechanism of the photodetector are discussed in detail via the schematic diagrams of energy band structure and carrier transport process. At last, a vivid image is obtained using the Ga2O3/GaN photodetector as an imaging pixel in the imaging system. This work provides an effective strategy to construct high-performance UV photodetectors toward optical imaging.
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