Influence of heterostructure on structure, electric and magnetic properties of Bi0.5(Na0.80,K0.20)0.5TiO3/BaZrO3 films prepared by the sol–gel method

Abstract This study reports on the structure, electric, and magnetic properties of Bi 0.5 (Na 0.80 ,K 0.20 ) 0.5 TiO 3 /BaZrO 3 (BNKT/BZO) heterolayered films synthesized via chemical solution deposition on Pt/Ti/SiO 2 /Si substrates. The influence of different heterolayered configurations on the microstructure, electric and magnetic properties of the films was investigated thoroughly. The heterostructures are expected to generate strongly correlated electron systems in the BNKT and BZO layers that cause a magnetic interface effect in the BNKT/BZO conjunction layer. The BZO layer also prevents metal ion evaporation, resulting in a decline in oxygen vacancies and an enhancement in the electric and magnetic properties. The obtained results show that magnetic properties and leakage current density ( J ) of BNKT/BZO heterolayered films were greatly improved thanks to the heterolayered structure. Heterolayered 4BNKT/2BZO films (M42) yield the highest M s and M r values of 14.4 emu cm −3 and 1.7 emu cm −3 , respectively, about three times higher than multilayered BNKT. Thanks to heterolayered structure, J decreases strongly from 16.0 × 10 −4 A cm −2 for BNKT films to 1.4 × 10 −4 A cm −2 for heterolayered M42 films. It has been verified that the leakage current in BNKT/BZO heterolayered films follows the Schottky barrier mechanism, with the barrier height fluctuating between 0.80 eV and 0.92 eV. The results of the study show that BNKT/BZO heterolayered films may be suitable for use in environmentally friendly multifunction devices.